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d a t a sh eet objective speci?cation file under integrated circuits, ic17 1996 jul 17 integrated circuits CGY2020G dcs 2 w power amplifier
1996 jul 17 2 philips semiconductors objective speci?cation dcs 2 w power ampli?er CGY2020G features power amplifier (pa) overall efficiency 42% 33 db gain 0 dbm input power gain control range >50 db integrated power sensor driver low output noise floor of pa < - 121 dbm/hz in dcs rx band wide operating temperature range - 20 to +85 c lqfp 48 pin package compatible with power ramping controller pca5075. applications 1710 to 1785 mhz hand-held transceivers for dcs applications 1800 mhz time division multiple access (tdma) systems. general description the CGY2020G is a dcs class 1 gaas monolithic microwave integrated circuit (mmic) power amplifier specifically designed to operate at 4.8 v battery supply. the chip also includes a power sensor driver so that no directional coupler is required in the power control loop. the pa requires only a simple low-pass filter to comply with the dcs transmit spurious specification. it can be switched off and its power controlled by monitoring the actual drain voltage applied to the amplifier stages. quick reference data note 1. for conditions, see chapters ac characteristics and dc characteristics. ordering information symbol parameter (1) min. typ. max. unit v dd positive supply voltage - 4.5 - v i dd positive peak supply current - 1.1 - a p o(max) maximum output power - 33 - dbm t amb operating ambient temperature - 20 - +85 c type number package name description version CGY2020G lqfp48 plastic low pro?le quad ?at package; 48 leads; body 7 x 7 x 1.4 mm sot313-2
1996 jul 17 3 philips semiconductors objective speci?cation dcs 2 w power ampli?er CGY2020G block diagram pinning symbol pin description gnd 1 to 7 ground rfo/v dd4 8 to 10 pa output and fourth stage supply voltage gnd 11 to 16 ground deto/v dd5 17 power sensor output and supply voltage gnd 18 and 19 ground v dd3 20 third stage supply voltage gnd 21 to 26 ground v dd2 27 second stage supply voltage gnd 28 to 31 ground v gg 32 negative gate supply voltage gnd 33 and 34 ground rfi 35 pa input gnd 36 and 37 ground v dd1 38 ?rst stage supply voltage gnd 39 to 48 ground fig.1 block diagram. (1) ground pins 1 to 7, 11 to 16, 18, 19, 21 to 26, 28 to 31, 33, 34, 36, 37 and 39 to 48. handbook, full pagewidth CGY2020G mgg163 (1) 32 8,9,10 17 38 27 20 35 gnd sensor driver v gg rfo/v dd4 v dd1 v dd2 v dd3 rfi deto/v dd5
1996 jul 17 4 philips semiconductors objective speci?cation dcs 2 w power ampli?er CGY2020G fig.2 pin configuration. handbook, full pagewidth 1 2 3 4 5 6 7 8 9 10 11 36 35 34 33 32 31 30 29 28 27 26 13 14 15 16 17 18 19 20 21 22 23 48 47 46 45 44 43 42 41 40 39 38 12 24 37 25 CGY2020G mgg162 gnd rfi gnd gnd gnd gnd gnd gnd v dd2 gnd gnd gnd gnd gnd gnd gnd gnd gnd rfo/v dd4 rfo/v dd4 gnd gnd v gg gnd gnd gnd gnd gnd gnd gnd gnd v dd1 gnd gnd gnd rfo/v dd4 gnd gnd gnd deto/v dd5 v dd3 gnd gnd gnd gnd gnd gnd gnd
1996 jul 17 5 philips semiconductors objective speci?cation dcs 2 w power ampli?er CGY2020G functional description operating conditions the CGY2020G is designed to meet the european telecommunications standards institute (etsi) dcs documents, the ets 300 577 specification, which are defined as follows: t on = 542.8 m s t = 4.3 ms duty cycle = 1/8. this amplifier is specifically designed for pulse operation allowing the use of a lqfp48 plastic package. power ampli?er the power amplifier (pa) consists of four cascaded gain stages with an open-drain configuration. each drain has to be loaded externally by an adequate reactive circuit which also has to be a dc path to the supply. the amplifier bias is set by using a negative voltage applied at pin v gg . this negative voltage must be present before the supply voltage is applied to the drains to avoid current overstress of the amplifier. power sensor driver the power sensor driver is a buffer amplifier that delivers an output signal at the deto pin which is proportional to the amplifier power. this signal can be detected by external diodes for power control purpose. as the sensor signal is taken from the input of the last stage of the pa, it is isolated from disturbances at the output by the reverse isolation of the pa output stage. an impedance mismatch at the pa output therefore does not significantly influence the signal delivered by the power sensor as this normally occurs when power sense is made using a directional coupler. consequently, the cost and space of using a directional coupler are saved. limiting values in accordance with the absolute maximum rating system (iec 134); general operating conditions applied. thermal characteristics general operating conditions applied note 1. this thermal resistance is measured under dcs pulse conditions. symbol parameter min. max. unit v dd positive supply voltage - 7v v gg negative supply voltage -- 10 v t j(max) maximum operating junction temperature - 150 c t stg ic storage temperature - 150 c p tot total power dissipation - 600 mw symbol parameter value unit r th j-c thermal resistance from junction to case; note 1 tbf k/w
1996 jul 17 6 philips semiconductors objective speci?cation dcs 2 w power ampli?er CGY2020G dc characteristics v dd = 4.5 v; t amb =25 c; peak current values during burst; general operating conditions applied; unless otherwise speci?ed. note 1. the negative bias v gg must be applied 10 m s before the power amplifier is switched on, and must remain applied until the power amplifier has been switched off. symbol parameter conditions min. typ. max. unit pins rfo/v dd4, v dd3 , v dd2 , v dd1 and deto/v dd5 v dd positive supply voltage 0 4.5 5.5 v i dd positive peak supply current -- 1.3 a pin v gg v gg negative supply voltage note 1 -- 2 - v i gg negative peak supply current - 0.5 2 ma
1996 jul 17 7 philips semiconductors objective speci?cation dcs 2 w power ampli?er CGY2020G ac characteristics v dd = 4.5 v; t amb =25 c; general operating conditions applied; unless otherwise speci?ed. measured and guaranteed on CGY2020G evaluation board. notes 1. including the 82 w resistor connected in parallel at the power amplifier input on the evaluation board. 2. the device is adjusted to provide nominal value of load power into a 50 w load. the device is switched off and a 6 : 1 load replaces the 50 w load. the device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees during a 60 seconds test period. symbol parameter conditions min. typ. max. unit power ampli?er p i input power - 2 - +2 dbm s 11 input return loss note 1; 50 w source --- 10 db f rf rf frequency range 1710 - 1785 mhz p o(max) maximum output power t amb =25 c; v dd = 4.5 v - 33 - dbm t amb = - 20 to +85 c; v dd = 4.2 v 31 -- dbm h ef?ciency at p o(max) - 42 - % r s optimum series load resistance - 6 -w c s optimum series load capacitance - 11 - pf p o(off) isolation pa off; p i = 0 dbm -- 45 - dbm n rx output noise in rx band --- 121 dbm/hz h2 2nd harmonic level --- 40 dbc h3 3rd harmonic level --- 35 dbc stab stability note 2 -- tbf dbc power sensor driver p o(det) sensor driver output power r l = 100 w ; relative to pa output power into 50 w load - 19 - 17 - 15 dbc d p o(det) driver output power variation load vswr < 6 : 1 at pa output -- tbf db
1996 jul 17 8 philips semiconductors objective speci?cation dcs 2 w power ampli?er CGY2020G application information fig.3 evaluation board schematic. all capacitors are type: smd0603. thickness: 0.8 mm; substrate: fr4; e r = 4.7. (1) trl1: width = 0.3 mm; length = 16 mm. (2) trl2: width = 0.5 mm; length = 10 mm. handbook, full pagewidth 1 2 3 4 5 6 7 8 9 10 11 48 47 46 45 44 43 42 41 40 x7r 39 38 37 12 mgg164 13 14 15 16 17 18 bas70 bas70 19 20 21 22 23 24 1 k w 1 k w 560 w 1 k w 39 pf 100 w 180 w 39 w - 90 m a 12 pf 12 pf 0.8 to 3 v bsr14 php109 10 pf 1 nf 2.2 pf 6 nh 1 nf 1.25 v 36 35 34 33 32 31 30 29 28 27 26 25 39 pf 1 nf 0.8 pf 2.2 pf 10 nf 22 pf dc output v diode v control v dd v bat + 4.8 v pa output - 2 v 10 pf CGY2020G v gg v gg rfo/v dd4 v dd1 v dd2 v dd3 rfi deto/ v dd5 1.5 pf 82 w 47 w pa input trl2 (2) trl1 (1) 100 pf
1996 jul 17 9 philips semiconductors objective speci?cation dcs 2 w power ampli?er CGY2020G package outline unit a max. a 1 a 2 a 3 b p ce (1) eh e ll p qz y w v q references outline version european projection issue date iec jedec eiaj mm 1.60 0.20 0.05 1.45 1.35 0.25 0.27 0.17 0.18 0.12 7.1 6.9 0.5 9.15 8.85 0.69 0.59 0.95 0.55 7 0 o o 0.12 0.1 0.2 1.0 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. 0.75 0.45 sot313-2 93-06-15 94-12-19 d (1) (1) (1) 7.1 6.9 h d 9.15 8.85 e z 0.95 0.55 d b p e e b 12 d h b p e h v m b d z d a z e e v m a 1 48 37 36 25 24 13 q a 1 a l p q detail x l (a ) 3 a 2 x y c w m w m 0 2.5 5 mm scale pin 1 index lqfp48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm sot313-2
1996 jul 17 10 philips semiconductors objective speci?cation dcs 2 w power ampli?er CGY2020G soldering introduction there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mounted ics, or for printed-circuits with high population densities. in these situations reflow soldering is often used. this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our ic package databook (order code 9398 652 90011). re?ow soldering reflow soldering techniques are suitable for all lqfp packages. reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several techniques exist for reflowing; for example, thermal conduction by heated belt. dwell times vary between 50 and 300 seconds depending on heating method. typical reflow temperatures range from 215 to 250 c. preheating is necessary to dry the paste and evaporate the binding agent. preheating duration: 45 minutes at 45 c. wave soldering wave soldering is not recommended for lqfp packages. this is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. if wave soldering cannot be avoided, the following conditions must be observed: a double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. the footprint must be at an angle of 45 to the board direction and must incorporate solder thieves downstream and at the side corners. even with these conditions, do not consider wave soldering lqfp packages lqfp48 (sot313-2), lqfp64 (sot314-2) or lqfp80 (sot315-1). during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. maximum permissible solder temperature is 260 c, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 c within 6 seconds. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. repairing soldered joints fix the component by first soldering two diagonally- opposite end leads. use only a low voltage soldering iron (less than 24 v) applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
1996 jul 17 11 philips semiconductors objective speci?cation dcs 2 w power ampli?er CGY2020G definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. short-form speci?cation the data in this speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
internet: http://www.semiconductors.philips.com/ps/ (1) CGY2020G_1 june 26, 1996 11:51 am philips semiconductors C a worldwide company ? philips electronics n.v. 1996 sca50 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 83749, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland: ul. lukiska 10, pl 04-123 warszawa, tel. +48 22 612 2831, fax. +48 22 612 2327 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 926 5361, fax. +7 095 564 8323 singapore: lorong 1, toa payoh, singapore 1231, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 7430 johannesburg 2000, tel. +27 11 470 5911, fax. +27 11 470 5494 south america: rua do rocio 220, 5th floor, suite 51, 04552-903 s?o paulo, s?o paulo - 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